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Wednesday, May 6, 2020 | History

2 edition of Rapid isothermal and transient annealing of non-implanted silicon found in the catalog.

Rapid isothermal and transient annealing of non-implanted silicon

John Robert Logan

Rapid isothermal and transient annealing of non-implanted silicon

by John Robert Logan

  • 162 Want to read
  • 15 Currently reading

Published by University of Birmingham in Birmingham .
Written in English


Edition Notes

Thesis (Ph.D.)-University of Birmingham, Dept of Metallurgy and Materials Science, 1990.

Statementby John Robert Logan.
ID Numbers
Open LibraryOL13928048M

Figure 5 shows the implied of the ion-implanted samples from QSSPC. The implied of the boron emitters increases about 30 mV at °C when the damage from the implantation is being annealed and about 15 mV more during the deep junction annealing at °C and °C. The increase of the implied at the high temperatures shows that the deep junction annealing after the activation reduces the Cited by: 8. Diffusion Synthesis of Silicides in Thin-Film Metal—Silicon Structures Graphite strip rapid isothermal annealing of tantalum silicide, J. Appl. Phys. 56(4), – (). Google Scholar. K. Daneshvar and R Measurement of the activation energy of tantalum silicide growth on silicon by rapid electron beam annealing, Jpn. J Cited by: 2.

CO2 Laser Annealing of Ion-Implanted Silicon: Relaxation Characteristics of Metastable Concentrations (With 6 Figures).- Rapid Isothermal Annealing for Semiconductor Applications: Aspects of Equipment Design (With 5 Figures).- Investigation of Polysilicon Implantation Under Thermal and Laser Annealing (With 8 Figures) Rahul Gupta, Porous Silicon Annealing Analysis Introduction The modern interest in porous silicon (PS) was instigated by a seminal publication by Canham on the discovery of room temperature luminescence from PS thin films (L. T. Canham, ).This work initiated the rapid increase of interest for PS as a material suitableFile Size: 1MB.

annealing (TA) or solid phase crystallization (SPC), and the other is laser crystallization (LC) [4]. TA is based on isothermal annealing of a-Si at temperature of – °C, but in many cases such a high temperature is not permitted due to substrate material or underlying structures. In some cases a solution to thermal budget. @article{osti_, title = {Annealing behaviour of arsenic implants in silicon}, author = {Baldo, E and Cappellani, F and Restelli, G}, abstractNote = {The annealing behavior of keV room-temperature arsenic implants in silicon below the amorphization dose was studied by comparing the physical profile and the electrical profiles following different isochronal anneals.


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Rapid isothermal and transient annealing of non-implanted silicon by John Robert Logan Download PDF EPUB FB2

Abstract: Single-crystal silicon wafers have been implanted with As, P, and B to doses of 1x–1x/cm2 and given a transient anneal using a Varian IA Rapid Isothermal by: Rapid isothermal annealing of As- P- and B-implanted silicon Page: 4, 9 p.

This article is part of the collection entitled: UNT Scholarly Works and was provided to UNT Digital Library by the UNT College of Arts and by:   Rapid isothermal annealing of As- P- and B-implanted silicon Page: 4, 9 p.

This article is part of the collection entitled: UNT Scholarly Works and was provided to UNT Digital Library by the UNT College of Arts and by: Silicon Integrated Circuits, Part 2 covers some of the most promising approaches along with the new understanding of processing-related areas of physics and chemistry.

The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid isothermal annealing; adiabatic annealing with laser and electron beams; pulsed melting; thermal flux annealing; rapid isothermal annealing.

Silicon wafers implanted with 7 5 As have been annealed with a Varian IA‐ isothermal annealer. The anneal occurs in vacuum using radiation from a resistively heated sheet of graphite. The anneal quality depends on the graphite heater temperature and exposure by: In the future, rapid annealing will be used where dimensional control for very small geometry circuits is important.

Rapid annealing techniques will probably have an impact on future device technology similar to that of ion implantation on present by: 1.

Enhanced diffusion of ion implanted boron in silicon during the first few seconds (transient) of rapid thermal annealing (RTA) has previously tentatively been attributed to either interstitial boron diffusion or damage enhanced diffusion. We have performed various anneal sequences of 11B implanted Si combined with post‐implantation of 10B and measured the boron concentration profiles with Cited by: The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid isothermal annealing; adiabatic annealing with laser and electron beams; pulsed melting; thermal flux annealing; rapid isothermal annealing; and several applications stemming from rapid annealing and semiconductor processing with directed-energy beams.

Enhanced diffusion of ion implanted boron in silicon during the first few seconds (transient) of rapid thermal annealing (RTA) has previously tentatively been attributed to either interstitial boron diffusion or damage enhanced by: Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon Article (PDF Available) in Applied Physics Letters 47(12) - January with 76 Reads.

Annealing of ion implantation damage and concomitant electrical activation of dopants, depth profiles, and lattice location of dopants have been studied in arsenic and boron‐implanted specimens after rapid thermal annealing. A ‘‘complete’’ annealing of displacement damage with full electrical activation of dopants and profile broadening less than Å can be attained for shallow Cited by: Silicon wafers implanted with 75As have been annealed with a Varian IA‐ isothermal annealer.

The anneal occurs in vacuum using radiation from a resistively heated sheet of graphite. The anneal quality depends on the graphite heater temperature and exposure time.

If the anneal time is too short implantation damage remains and if the time is too long measurable losses of As occur causing Cited by: RTP or annealing or heat treatment has been synonymous with rapid isothermal annealing, transient thermal annealing, or short-time annealing in the literature.

Introduced by the semiconductor industry for consolidation of thin films in the late s, this technique significantly reduces the Cited by: 1. When rapid thermal annealing (RTA) systems became available for silicon processing in the early s, it was expected that their short annealing times compared to furnaces would reduce dopant diffusion while achieving high electrical activity.

Soon after their introduction it was discovered that the expected reduction in diffusion was not as large as had been hoped, nor was activation as high as. We studied the annealing of silicon substrates implanted with a medium dose of boron ions (3 X 1~14 em -2, keY) employing conventional furnace annealing (FA) and rapid thermal annealIng (RTA) processes performed in a nitrogen atmosphere.

Abstract: Silicon wafers implanted with 75As have been annealed with a Varian IA isothermal annealer. The anneal occurs in vacuum using radiation from a resistively heated sheet of graphite.

The anneal quality depends on the graphite heater temperature and exposure by: The process of rapid annealing of implanted silicon wafers under non-isothermal conditions has been studied. It was established, applied temperature gradient ∇T gives rise to relative shift of.

Effect of rapid thermal annealing on beryllium implanted p-type GaN Article in Materials Science and Engineering B (3) March with 35 Reads How we measure 'reads'. This invention is directed to the fabrication of semiconductor devices, especially those comprising III-V and II-VI compound semiconductor materials, and involves Rapid Thermal Annealing (RTA) of semiconductor wafers, especially those implanted with a dopant(s).

The invention is also concerned with a black-box implement used in combination with the by: Ion Implantation: Equipment and Techniques Radiation Annealing of Silicon-Implanted GaAs with a CW Xe Arc Lamp.

Lin, B. Hsieh, C. Peng, J. Lou. Pages Rapid Isothermal Annealing for Semiconductor Applications: Aspects of Equipment Design. In this study, damage induced by Ar + ion implantation and its annealing behavior during rapid thermal annealing for 10 s at temperatures between –°C were investigated by thermal wave modulated optical reflectance, deep level transient spectroscopy, reflection high energy electron diffraction, Rutherford backscattering aligned spectra and transmission electron by: 2.Application of Rapid Thermal Annealing Systems.

Rapid thermal processing (or RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to C or greater) on a timescale of several seconds or less.Photon, electron, and ion beam interactions with solids provide a wide range of physical and chemical effects which depend on the nature of the irradiated materials as well as the characteristics of Author: Victor E.

Borisenko, Peter J. Hesketh.